Beijing New Chuang Si Fang Electronic Co., Ltd.
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  • Contact Person : Ms. Zhang Vivian
  • Company Name : Beijing New Chuang Si Fang Electronic Co., Ltd.
  • Tel : 86-010-57589090
  • Fax : 86-01-57589168
  • Address : Beijing,beijing,3rd FL.,Entrance C.,Building No.201,IT Industry Park, No.10A,Jiuxianqiao North Road,Chaoyang District,Beijing 100015, P.R. China
  • Country/Region : China
  • Zip : 100015

IGBT driver transformers

IGBT driver transformers
Product Detailed
Related Categories:Transformers
DRT series IGBT drive series transformer is our new product designed for drive IGBT and MOSFET, using New material as core mater

Parameter Definitions, diagrams of Layout/Installation/Coil, Typical Specifications:

    1.Parameter Definitions:

    u-Tum ratio=1:2:3

    Vp-dielectric strength between coil windings with 60s test duration.

    ∫udt-Math product of volt-microsecond≈V1·tn(the value can keep unchanged in some frequency range).

    V1-Input signal voltage (primary pulse voltage).

    tn-Rated pulse width of the drive transformer, under related V1 and Fp.

    V2-Output signal voltage (secondary pulse voltage).

    RL-IGBT module or MOSFET equivalent resistance of control section.

    Lp-Inductance of primary, f=1000Hz, V=0.3V.

    Ls-Leakage inductance(measured when secondary  shorted) f=1000Hz, V=1V. 

    Ck-Coupling capacity, f=1000Hz, V=1V.

 

Model

Ratio

u

Vp

(kV)

Primary Induction

LP

Leakage Induction

LS

Coupling Capacity

CK

∫udt

(μVS)

V1

(V)

tn

(μS)

V2

(V)

RL

(Ω)

Frequency

DRT801/201A

2:1

3.1

8mH

20μH

20pF

≥280

20

14

9

100

100Hz~50 kHz

IGBT driver transformers



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