- Contact Person : Ms. Zhang Vivian
- Company Name : Beijing New Chuang Si Fang Electronic Co., Ltd.
- Tel : 86-010-57589090
- Fax : 86-01-57589168
- Address : Beijing,beijing,3rd FL.,Entrance C.,Building No.201,IT Industry Park, No.10A,Jiuxianqiao North Road,Chaoyang District,Beijing 100015, P.R. China
- Country/Region : China
- Zip : 100015
BINGZI transformer IGBT driver transformers
Parameter Definitions, diagrams of Layout/Installation/Coil, Typical Specifications:
1 Parameter Definitions:
u-Tum ratio=1:2:3
Vp-dielectric strength between coil windings with 60s test duration.
∫udt-Math product of volt-microsecond≈V1·tn(the value can keep unchanged in some frequency range).
V1-Input signal voltage (primary pulse voltage).
tn-Rated pulse width of the drive transformer, under related V1 and Fp.
V2-Output signal voltage (secondary pulse voltage).
RL-IGBT module or MOSFET equivalent resistance of control section.
Lp-Inductance of primary, f=1000Hz, V=0.3V.
Ls-Leakage inductance(measured when secondary shorted) f=1000Hz, V=1V.
Ck-Coupling capacity, f=1000Hz, V=1V.
Model | Ratio u | Vp (kV) | Primary Induction LP | Leakage Induction LS | Coupling Capacity CK | ∫udt (μVS) | V1 (V) | tn (μS) | V2 (V) | RL (Ω) | Frequency |
DRT801/301A | 3:1 | 3.1 | 8mH | 30μH | 18pF | ≥280 | 30 | 9 | 9 | 100 | 100Hz~50 kHz |
BINGZI transformer IGBT driver transformers
